PART |
Description |
Maker |
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF1601B MGF1601B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
FLL810IQ-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|